mitsubishi semiconductors M54585WP 8-unit 500ma darlington transistor array with clamp diode aug-2011 pin configuration description M54585WP is eight-circuit darlington transistor arrays with clamping diodes. the circuits are made of npn transistors. both the semiconductor integrated circuits perform high- current driving with extrem ely low input-current supply. features high breakdown voltage (bv ceo > 50v) high-current driving (i c (max) = 500ma) with clamping diodes driving available with ttl output or with pmos ic output applications drives of relays and printers, digit drives of indication elements such as leds and lamps, and mos-bipolar logic ic interfaces function the m54585 is each have eight circuits, which are npn darlington transistors. input transistors have resistance of 2.7k between the base and input pin. a spikekiller clamping diode is provided between each output pin and gnd. output transistor emitte rs are all connected to the gnd pin. collector current is 500ma maximum. the maximum collector-emitter voltage is 50v. package type 18p4x circuit diagram the eight circuits share the com and gnd. the diode, indicated with the dotted line, is parasitic, and cannot be used. unit: ma 500 clamping diode forward current i f ma 500 current per circuit output, l collector current i c ?20 + 75 operating temperature t opr ?55 + 125 storage temperature t stg v ?0.5 +30 input voltage v i v 50 clamping diode reverse voltage v r w 1.79 ta = 25 , when mounted on board power dissipation p d v ?0.5 + 50 output , h collector-emitter voltage v ceo unit ratings conditions parameter symbol absolute maximum ratings (unless otherwise noted, ta = ?20 ~ +75 ) output input output input gnd com 2 3 4 5 6 7 8 9 17 16 15 14 13 12 11 10 o2 o3 o4 o5 o6 o7 o8 in2 in3 in4 in5 in6 in7 in8 gnd com common 1 18 o1 in1 2.7k 7.2k 3k
mitsubishi semiconductors M54585WP 8-unit 500ma darlington transistor array with clamp diode aug-2011 2 i c 200ma i c 400ma 3.4 duty cycle no more than 6% v 0.6 0 ?l? input voltage v il v 30 3.85 ?h? input voltage v ih 200 0 duty cycle no more than 34% ma 400 0 collector current (current per 1 circuit when 8 circuits are coming on simultaneously) i c v 50 0 output voltage v o max typ min unit limits parameter symbol recommended operating (unless otherwise noted, ta = ?20 ~ +75 ) 18 8.7 v i = 25v a 100 v r = 50v clamping diode reverse current i r v i = 3.4v , i c = 200ma ma input current i i v i = 3.85v , i c = 400ma 2500 1000 v ce = 4v, i c = 350ma, ta = 25 dc amplification factor h fe v 2.4 1.5 i f = 400ma clamping diode forward voltage v f 1.8 0.95 v i = 3.85v 1.6 1.0 v 2.4 1.3 collector-emitter saturation voltage v ce(sat) v 50 i ceo = 100 a collector-emitter breakdown voltage v (br)ceo max typ min unit limits test conditions parameter symbol electrical characteristics (unless otherwise noted, ta = 20 75 * the typical values are those measured under ambient temperature (ta) of 25 . there is no guarantee that these valu es are obtained under any conditions. switching characteristics (unless otherwise noted, ta = 25 ns ? 240 ? turn-off time t off ns ? 12 ? c l = 15pf note 1 turn-on time t on max typ min unit limits test conditions parameter symbol note 1 test circuit timing diagram output input 50% 50% on 50% 50% off 50 c l pg input output measured device (1) pulse generator (pg) characteristics: prr = 1khz, tw = 10 s, tr = 6ns, tf = 6ns, z o = 50 ,v i = 3.85v (2) input-output conditions : r l = 25 , vo = 10v (3) electrostatic capacity cl includes floating capacitance at connections and input capacitance at probes v o r l open
mitsubishi semiconductors M54585WP 8-unit 500ma darlington transistor array with clamp diode aug-2011 3 typical characteristics thermal derating factor characteristics ambient temperature ta( ) power dissipation p d (w) 0 25 50 75 100 0 0.5 1.0 1.5 2.0 output saturation voltage collector current characteristics output saturation voltage v ce(sat) (v) collector current i c (ma) duty-cycle-collector current characteristics duty cycle (%) collector current i c (ma) duty cycle (%) collector current i c (ma) 0 20 60 80 100 ?the collector current values represent the current per circuit. ?repeated frequency > 10hz ?the value in the circle represents the value of the simultaneously-operated circuit. ?ta = 25 40 duty-cycle-collector current characteristics M54585WP 0 20 60 80 100 0 40 ?the collector current values represent the current per circuit. ?repeated frequency > 10hz ?the value in the circle represents the value of the simultaneously-operated circuit. ?ta = 75 0 100 200 300 500 400 100 200 300 500 400 0 0.5 1.0 1.5 2.0 0 ta=25 ta=-20 ta=75 v i =3.4v 100 200 300 500 400 dc amplification factor collector current characteristics collector current i c (ma) dc amplification factor h fe 10 10 7 v ce =4v 5 3 2 3 10 2 4 7 5 3 2 10 7 5 3 2 3 10 2 7 5 3 2 10 1 ta=25 ta=-20 ta=75 collector current i c (ma) grounded emitter transfer characteristics input voltage v i (v) 01234 0 100 200 300 500 ta=25 ta=-20 ta=75 v ce =4v 400
mitsubishi semiconductors M54585WP 8-unit 500ma darlington transistor array with clamp diode aug-2011 4 forward bias current i f (ma) clamping diode characteristics forward bias voltage v f (v) input current i i( ma) input characteristics input voltage v i (v) 0 5 10 20 25 0 2 6 8 10 15 4 ta=25 ta=75 ta=-20 0 0.5 1.0 1.5 2.0 0 100 200 300 500 ta=25 ta=-20 ta=75 400
mitsubishi semiconductors M54585WP 8-unit 500ma darlington transistor array with clamp diode aug-2011 5 package outline
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